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VN20N Datasheet(PDF) 4 Page - STMicroelectronics

No. de Pieza. VN20N
Descripción  HIGH SIDE SMART POWER SOLID STATE RELAY
Descarga  11 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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VN20N Datasheet(HTML) 4 Page - STMicroelectronics

 
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ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS (continued)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
VSCL (
•) Status Clamp Voltage
ISTAT =10 mA
ISTAT =-10 mA
6
-0. 7
V
V
tSC
Switch-off Time in
Short Circuit Condition
at Start-Up
RLOA D <10 m
Tc =25
oC2
5
ms
IOV
Over Current
RLOA D <10 m
-40
≤ Tc ≤ 125 oC
140
A
IAV
Average Current in
Short Circuit
RLOAD <10 m
Tc =85
oC2.5
A
IOL
Open Load Current
Level
5
700
mA
TTSD
Thermal Shut-down
Temperature
140
oC
TR
Reset Temperature
125
oC
(*) The VIH is internally cl amped at 6V about. It is possibl e to connect this pin to an higher voltage via an external resi stor
cal culated to not exceed 10 mA at the i nput pin.
(
•) Status determination > 100 µs after the switching edge.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates
open
circuit
(no
load)
and
over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
oC. When the
temperature returns to about 125
oC the switch is
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING THE DEVICE AGAINST REVER-
SE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -VF is seen by the device. (VIL,VIH
thresholds and VSTAT are increased by VF with
respect to power GND).
The undervoltage shutdown level is increased
by VF.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of VIH,VIL and VSTAT takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
VN20N
4/11


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