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VND05B Datasheet(PDF) 5 Page - STMicroelectronics

No. de Pieza. VND05B
Descripción  DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY
Descarga  11 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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VND05B Datasheet(HTML) 5 Page - STMicroelectronics

 
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VND05B / VND05B (011Y) / VND05B (012Y)
FUNCTIONAL DESCRIPTION
The device has a common diagnostic output for
both channels which indicates open load in on-
state, open load in off-state, overtemperature
conditions and stuck-on to VCC.
From the falling edge of the input signal, the status
output, initially low to signal a fault condition
(overtemperature or open load on-state), will go
back to a high state with a different delay in case of
overtemperature (tpovl) and in case of open load
(tpol)
respectively.
This
feature
allows
to
discriminate the nature of the detected fault. To
protect
the
device
against short-circuit and
overcurrent condition, the thermal protection turns
the integrated PowerMOS off at a minimum
junction
temperature
of
140
°C. When this
temperature returns to 125
°C the switch is
automatically turned in again. In short-circuit the
protection reacts with virtually no delay, the sensor
(one for each channel) being located inside each
of the two PowerMOS areas. This positioning
allows the device to operate with one channel in
automatic thermal cycling and the other one on a
normal load. An internal function of the devices
ensures the fast demagnetization of inductive
loads with a typical voltage (Vdemag) of -18V. This
function allows to greatly reduce the power
dissipation according to the formula:
Pdem= 0.5Lload(Iload)
2[(V
CC+Vdemag)/Vdemag]f
where f= switching frequency and
Vdemag = demagnetization voltage.
The maximum inductance which causes the chip
temperature to reach the shutdown temperature in
a specified thermal environment is a function of
the load current for a fixed VCC,Vdemag and f
according to the above formula. In this device if the
GND pin is disconnected, with VCC not exceeding
16V, both channels will switch off.
PROTECTING
THE
DEVICE
AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 2 (GND) and
ground, as shown in the typical application circuit
(fig. 2).
The consequences of the voltage drop across this
diode are as follows:
- If the input is pulled to power GND, a negative
voltage of -Vf is seen by the device. (Vil,Vih
thresholds and VSTAT are increased by Vf with
respect to power GND).
- The undervoltage shutdown level is increased by
Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the device
ground (see application circuit in fig. 3), which
becomes the common signal GND for the whole
control board avoiding shift on Vil,Vih and VSTAT.
This solution allows the use of a standard diode.
Switching Time Waveforms


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