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VNQ660SP Datasheet(PDF) 6 Page - STMicroelectronics

No. de Pieza. VNQ660SP
Descripción  QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
Descarga  16 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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VNQ660SP Datasheet(HTML) 6 Page - STMicroelectronics

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Electrical specifications
VNQ660SP
6/26
2
Electrical specifications
2.1
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality document.
2.2
Thermal data
Table 3.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCC
Supply voltage
41
V
- VCC
Reverse DC supply voltage
- 0.3
V
IOUT
DC output current, per each channel
Internally limited
A
IR
Reverse DC output current, per each channel
- 15
A
IIN
Input current
+/- 10
mA
ISTAT
Status current
+/- 10
mA
IGND
DC ground current at TC < 25°C
-200
mA
VESD
Electrostatic discharge (human body model: R=1.5K
Ω;
C = 100pF)
- INPUT
- STATUS
- OUTPUT
- VCC
4000
4000
5000
5000
V
V
V
V
EMAX
Maximum switching energy
(L = 0.38mH; RL = 0Ω; Vbat = 13.5V; Tjstart = 150ºC; IL = 14A)
101
mJ
Ptot
Power dissipation at TC = 25°C
114
W
Tj
Junction operating temperature
- 40 to 150
°C
Tstg
Storage temperature
- 65 to 150
°C
EC
Non repetitive clamping energy at TC = 25°C
150
mJ
Table 4.
Thermal data (per island)
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
1.1(1)
52(2)
°C/W
Rthj-amb
Thermal resistance junction-ambient (one chip ON)
51.1(1)
1.
When mounted on a standard single-sided FR-4 board with 1cm2 of Cu (at least 35 µm thick).
33(2)
2.
When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35 µm thick).
°C/W


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