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IRF6N60FP Datasheet(PDF) 2 Page - Suntac Electronic Corp. |
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IRF6N60FP Datasheet(HTML) 2 Page - Suntac Electronic Corp. |
2 / 5 page ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current Continuous Pulsed ID IDM 6.0 18 A Gate-to-Source Voltage Continue Non-repetitive VGS VGSM ±20 ±40 V V Total Power Dissipation TO-220 TO-220FP PD 125 45 W Operating and Storage Temperature Range TJ, TSTG -55 to 150 Single Pulse Drain-to-Source Avalanche Energy TJ = 25 (VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25 )EAS 180 mJ Thermal Resistance Junction to Case Junction to Ambient JC JA 1.0 62.5 /W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 260 (1) VDD = 50V, ID = 6A (2) Pulse Width and frequency is limited by TJ(max) and thermal response ORDERING INFORMATION Part Number Package TEST CIRCUIT Test Circuit – Avalanche Capability IRF6N60...............................................TO-220 ....................IRF6N60FP TO-220 Full Pak IRF6N60 POWER MOSFET Page 2 |
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