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FGB30N6S2 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FGB30N6S2 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 11 page ©2001 Fairchild Semiconductor Corporation July 2001 FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A FGH30N6S2 / FGP30N6S2 / FGB30N6S2 600V, SMPS II Series N-Channel IGBT General Description The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combin- ing the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capa- bility (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These de- vices are ideally suited for high voltage switched mode pow- er supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • Power Factor Correction (PFC) circuits • Full bridge topologies • Half bridge topologies • Push-Pull circuits • Uninterruptible power supplies • Zero voltage and zero current switching circuits Formerly Developmental Type TA49367. Features • 100kHz Operation at 390V, 14A • 200kHZ Operation at 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 23nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . . . . 6.5V Typical • UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ • Low Conduction Loss Device Maximum Ratings T C= 25°C unless otherwise noted Symbol Parameter Ratings Units BVCES Collector to Emitter Breakdown Voltage 600 V IC25 Collector Current Continuous, TC = 25°C 45 A IC110 Collector Current Continuous, TC = 110°C 20 A ICM Collector Current Pulsed (Note 1) 108 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2 60A at 600V EAS Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V 150 mJ PD Power Dissipation Total TC = 25°C 167 W Power Dissipation Derating TC > 25°C 1.33 W/°C TJ Operating Junction Temperature Range -55 to 150 °C TSTG Storage Junction Temperature Range -55 to 150 °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Package JEDEC STYLE TO-247 Symbol G C E C E G JEDEC STYLE TO-220AB G C E JEDEC STYLE TO-263AB G C E |
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