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2SC3138 Datasheet(Hoja de datos) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No. de Pieza. 2SC3138
Descripción  Silicon NPN Triple Diffused Type
Descarga  1 Pages
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Fabricante  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
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 1 page
background image
SMD Type
Transistors
1
www.kexin.com.cn
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
Silicon NPN Triple Diffused Type
2SC3138
Features
High voltage. VCBO = 200 V (max)
VCEO = 200 V (max)
Small flat package.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
200
V
Collector-emitter voltage
VCEO
200
V
Emitter-base voltage
VEBO
5V
Collector current
IC
50
mA
Base current
IB
20
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55to+125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB = 200 V, IE =0
0.1
ìA
Emitter cut-off current
IEBO
VEB =5V, IC =0
0.1
ìA
Collector-base breakdown voltage
V(BR)CBO IC =0.1 mA, IE = 0
200
V
Collector-emitter breakdown voltage
V(BR)CEO IC =1mA, IB = 0
200
V
DC current gain
hFE
VCE =3V, IC = 10 mA
70
240
Collector-emitter saturation voltage
VCE (sat) IC =10mA, IB =1mA
0.1
0.5
V
Base-emitter saturation voltage
VBE (sat) IC =10mA, IB = 1 mA
0.75
1.5
V
Transition frequency
fT
VCE =10V, IC = 2 mA
50
100
MHz
Collector output capacitance
Cob
VCB =10V, IE = 0,f= 1 MHz
2
4
pF
Turn-on time
ton
pulse width = 5ìs,duty cycle
2
0.3
ìs
Storage time
tstg
IB1=-IB2=0.6 mA
2
ìs
Fall time
tf
VCC=50V,IC=6mA
0.4
ìs
hFE Classification
Marking
NO
NY
Rank
O
Y
hFE
70
140
120
240




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