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TC1411EPA Datasheet(PDF) 1 Page - TelCom Semiconductor, Inc

No. de pieza TC1411EPA
Descripción Electrónicos  1A HIGH-SPEED MOSFET DRIVERS
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Fabricante Electrónico  TELCOM [TelCom Semiconductor, Inc]
Página de inicio  http://www.telcom-semi.com
Logo TELCOM - TelCom Semiconductor, Inc

TC1411EPA Datasheet(HTML) 1 Page - TelCom Semiconductor, Inc

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TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
1A HIGH-SPEED MOSFET DRIVERS
TC1411
TC1411N
ORDERING INFORMATION
Part No.
Package
Temp. Range
TC1411COA
8-Pin SOIC
0
°C to +70°C
TC1411CPA
8-Pin Plastic DIP
0
°C to +70°C
TC1411EOA
8-Pin SOIC
– 40
°C to +85°C
TC1411EPA
8-Pin Plastic DIP
– 40
°C to +85°C
TC1411NCOA
8-Pin SOIC
0
°C to +70°C
TC1411NCPA
8-Pin Plastic DIP
0
°C to +70°C
TC1411NEOA
8-Pin SOIC
– 40
°C to +85°C
TC1411NEPA
8-Pin Plastic DIP
– 40
°C to +85°C
FUNCTIONAL BLOCK DIAGRAM
OUTPUT
INPUT
GND
EFFECTIVE
INPUT
C = 10pF
300mV
INVERTING
OUTPUTS
NONINVERTING
OUTPUTS
VDD
TC1411N
4.7V
TC1411
FEATURES
s
Latch-Up Protected: Will Withstand 500mA
Reverse Current
s
Input Will Withstand Negative Inputs Up to 5V
s
ESD Protected .................................................... 4 kV
s
High Peak Output Current .................................. 1A
s
Wide Operating Range .......................... 4.5V to 16V
s
High Capacitive Load
Drive Capability .......................... 1000pF in 25nsec
s
Short Delay Time .................................. 30nsec Typ
s
Consistent Delay Times With Changes in
Supply Voltage
s
Matched Delay Times
s
Low Supply Current
— With Logic “1” Input ................................. 500
µA
— With Logic “0” Input ................................. 150
µA
s
Low Output Impedance ....................................... 8
s
Pinout Same as TC1410/12/13
GENERAL DESCRIPTION
The TC1411/1411N are 1A CMOS buffer/drivers. They
will not latch up under any conditions within their power and
voltage ratings. They are not subject to damage when up to
5V of noise spiking of either polarity occurs on the ground
pin. They can accept, without damage or logic upset, up to
500 mA of current of either polarity being forced back into
their output. All terminals are fully protected against up to 4
kV of electrostatic discharge.
As MOSFET drivers, the TC1411/1411N can easily
switch 1000 pF gate capacitance in 25nsec with matched
rise and fall times, and provide low enough impedance in
both the ON and the OFF states to ensure the MOSFET’s
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater accuracy.
PIN CONFIGURATIONS
TC1411
1
2
3
4
VDD
5
6
7
8
OUT
GND
VDD
IN
NC
GND
NC = NO INTERNAL CONNECTION
2
6, 7
INVERTING
NOTE: SOIC pinout is identical to DIP.
OUT
TC1411N
1
2
3
4
VDD
5
6
7
8
OUT
GND
VDD
IN
NC
GND
2
6, 7
NONINVERTING
OUT
TC1411/N-10 10/11/96


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