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BCW61B Datasheet(Hoja de datos) 2 Page - Guangdong Kexin Industrial Co.,Ltd

No. de Pieza. BCW61B
Descripción  General Purpose Transistor
Descarga  2 Pages
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Fabricante  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
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www.kexin.com.cn
2
SMD Type
IC
SMD Type
Transistors
Marking
TYPE
BCW61A
BCW61B
BCW61C
BCW61D
Marking
BA
BB
BC
BD
BCW61A/B/C/D
Electrical Characteristics Ta = 25
Symbol
Testconditons
Min
Typ
Max
Unit
ICBO
IE =0; VCB = -32 V
-20
nA
ICBO
IE =0; VCB =-32 V; Tamb = 150
-20
ìA
IEBO
IC =0; VEB =-4V
-20
nA
BCW61B
30
BCW61C
40
BCW61D
100
BCW61B
180
310
BCW61C
250
460
BCW61D
380
630
BCW61B
80
BCW61C
100
BCW61D
110
IC =-10 mA; IB = -0.25 mA
-60
-250
mV
IC =-50 mA; IB = -1.25 mA
-120
-550
mV
IC =-10 mA; IB = -0.25 mA
-600
-850
mV
IC =-50 mA; IB = -1.25 mA
-0.68
-1.05
V
VBE
IC =-2mA; VCE = -5 V
-600
-650
-750
mV
CC
IE =ie=0; VCB = -10 V; f = 1 MHz
4.5
pF
Ce
IC =ic = 0; VEB = -0.5 V; f = 1 MHz
11
pF
fT
IC =-10 mA; VCE = -5 V; f = 100 MHz
100
MHz
NF
IC = -200 ìA; VCE =-5V; RS =2kÙ;
f= 1 kHz;B= 200 Hz
26
dB
* Pulse test: tp
300 ìs; d
0.02.
hFE
IC = -10ìA; VCE =-5V
IC =-50 mA; VCE =-5V
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Noise figure
Collector-emitter saturation voltage
Base to emitter saturation voltage
Base to emitter voltage
hFE
IC =-2mA; VCE =-5V
Collector capacitance
Transition frequency *
VBE(sat)
VCE(sat)
Emitter capacitance
DC current gain
hFE




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