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2SC3120 Datasheet(Hoja de datos) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No. de Pieza. 2SC3120
Descripción  Silicon NPN Epitaxial
Descarga  1 Pages
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Fabricante  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
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 1 page
background image
SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
Silicon NPN Epitaxial
2SC3120
Features
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
3V
Collector current
IC
50
mA
Base current
IB
25
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Storage temperature Range
Tstg
-55to+125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB = 30V, IE =0
0.1
ìA
Emitter cut-off current
IEBO
VEB =2V, IC =0
1.0
ìA
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
15
V
DC current gain
hFE
VCE =10V, IC = 5 mA
40
100
200
Reverse Transfer Capacitance
Cre
VCB=10V, IE=0, f=1MHz
0.6
0.9
pF
Transition Frequency
fT
VCE =10V, IC = 2mA
1500
2400
MHz
Conversion Gain
Gce
VCE =10V, IC = 2mA,f=800MHz
12
17
dB
Noise Figure
NF
FL=830MHz
8
dB
Marking
Marking
HB




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