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2SC4179 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

No. de pieza 2SC4179
Descripción Electrónicos  NPN Silicon Epitaxia
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Fabricante Electrónico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de inicio  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC4179 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC4179 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
IC
www.kexin.com.cn
1
SMD Type
Transistors
1 Emitter
2 Base
3 Collector
NPN Silicon Epitaxia
2SC4179
Features
High gain bandwidth product.
Low output capacitance.
Low noise figure.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5V
Collector current
IC
50
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB =50V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB =5V, IC =0
0.1
ìA
DC current gain *
hFE
VCE =6V , IC = 1.0mA
60
100
180
Base-emitter voltage *
VBE
VCE =6V , IC = 1.0mA
0.65
0.70
0.75
V
Collector-emitter saturation voltage *
VCE(sat) IC =10mA, IB = 1.0mA
0.08
0.3
V
Gain bandwidth product
fT
VCE =6V, IE = -1.0mA
150
250
MHz
Output capacitance
Cob
VCE =6V, IE = 0, f = 1MHz
1.9
2.2
pF
Collector to base time constant
Cc'rb'b
VCB =6V , IE = -10mA , f = 31.9MHz
10
15
ps
Noise figure
NF
VCE =6V , IE = -1.0mA , Rg = 500Ù, f =
1.0MHz
24
dB
*. PW
350ìs,duty cycle
2%
hFE Classification
Marking
FA3
FA4
hFE
60
120
90 180


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