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BA779 Datasheet(Hoja de datos) 2 Page - Vishay Siliconix

No. de Pieza. BA779
Descripción  Silicon PIN Diodes
Descarga  4 Pages
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Fabricante  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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BA779.BA779S
Vishay Telefunken
Rev. 3, 01-Apr-99
2 (4)
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 85532
Characteristics (Tj = 25_C unless otherwise specified)
0
0.4
0.8
1.2
1.6
0.01
0.1
1
10
100
2.0
95 9735
VF – Forward Voltage ( V )
Tamb=25°C
Scattering Limit
Figure 1. Forward Current vs. Forward Voltage
0.001
0.01
0.1
1
1
10
100
1000
10000
10
95 9734
IF – Forward Current ( mA )
f >20 MHz
Tj =25°C
Figure 2. Differential Forward Resistance vs.
Forward Current
020
40
60
–80
–60
–40
–20
0
20
f2, modulated with 200 kHz, m=100% (MHz)
80
95 9733
P–Circuit with10 dBAttenuation
V0 =40dBmV
f1 = 100 MHz unmodulated
Figure 3. Typ. Cross Modulation Distortion vs
Frequency f2




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