BPW85 datasheet(2/6 Pages) VISHAY

No. de pieza	BPW85

Descripción Electrónicos	Silicon NPN Phototransistor

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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BPW85

Vishay Telefunken

2 (6)

Rev. 3, 16-Nov-99

www.vishay.de

• FaxBack +1-408-970-5600

Document Number 81531

Basic Characteristics

Tamb = 25_C

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Collector Emitter Breakdown

Voltage

IC = 1 mA

V(BR)CE

O

70

V

Collector Dark Current

VCE = 20 V, E = 0

ICEO

1

200

nA

Collector Emitter Capacitance

VCE = 5 V, f = 1 MHz, E = 0

CCEO

3

pF

Angle of Half Sensitivity

ϕ

±25

deg

Wavelength of Peak Sensitivity

lp

850

nm

Range of Spectral Bandwidth

l0.5

620...980

nm

Collector Emitter Saturation

Voltage

Ee = 1 mW/cm2,

l = 950 nm, IC = 0.1 mA

VCEsat

0.3

V

Turn–On Time

VS = 5 V, IC = 5 mA,

RL = 100 W

ton

2.0

ms

Turn–Off Time

VS = 5 V, IC = 5 mA,

RL = 100 W

toff

2.3

ms

Cut–Off Frequency

VS = 5 V, IC = 5 mA,

RL = 100 W

fc

180

kHz

Type Dedicated Characteristics

Tamb = 25_C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Collector Light Current Ee=1mW/cm2,

BPW85A

Ica

0.8

1.5

2.5

mA

g

e

l=950nm, VCE=5V

BPW85B

Ica

1.5

2.5

4.0

mA

BPW85C

Ica

3.0

5.0

8.0

mA

Typical Characteristics (Tamb = 25_C unless otherwise specified)

020

4060

80

0

25

50

75

100

125

Tamb – Ambient Temperature ( °C )

100

94 8308

RthJA

Figure 1. Total Power Dissipation vs. Ambient Temperature

94 8304

20

100

40

60

80

Tamb – Ambient Temperature ( °C )

100

101

102

103

104

VCE=20V

Figure 2. Collector Dark Current vs. Ambient Temperature

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