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BDT88F Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza BDT88F
Descripción Electrónicos  isc Silicon PNP Power Transistors
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
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BDT88F Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
BDT82F/84F/86F/88F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDT82F
-60
BDT84F
-80
BDT86F
-100
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT88F
IC= -30mA; IB= 0
-120
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -5A; IB= -0.5A
B
-1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -7A; IB= -0.7A
B
-1.6
V
VBE(on)
Base-Emitter On Voltage
IC= -5A ; VCE= -4V
-1.5
V
ICES
Collector Cutoff Current
VCE= 0.8VCBOmax; VBE= 0
-1
mA
ICBO
Collector Cutoff Current
VCB= VCBOmax; IE= 0
-0.2
mA
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
-0.1
mA
hFE-1
DC Current Gain
IC= -50mA ; VCE= -10V
40
hFE-2
DC Current Gain
IC= -5A ; VCE= -4V
40
fT
Current-Gain—Bandwidth Product
IC= -0.5A ; VCE= -10V
20
MHz
Switching Times
ton
Turn-On Time
1
μs
toff
Turn-Off Time
IC= -7A; IB1= -IB2= -0.7A
2
μs
isc Website：www.iscsemi.cn


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