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2SA1249 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1249 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1249 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=∞ -160 V V(BR)CBO Collector-base breakdown voltage IC=-10μA; IE=0 -180 V V(BR)EBO Emitter-base breakdown voltage IE=-10μA ; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA B -0.2 -0.5 V VBEsat Base-emitter saturation voltage IC=-500mA; IB=-50mA B -0.85 -1.2 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 μA hFE-1 DC current gain IC=-100mA ; VCE=-5V 100 400 hFE-2 DC current gain IC=-10mA ; VCE=-5V 90 fT Transition frequency IC=-50mA ; VCE=-10V 120 MHz Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 22 pF hFE-1 Classifications R S T 100-200 140-280 200-400 2 |
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