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2SA1264N Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1264N Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1264N CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A -2.0 V VBE Base-emitter voltage IC=-4A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-4A ; VCE=-5V 35 fT Transition frequency IC=-1A ; VCE=-5V 30 MHz Cob Output capacitance IE=0 ; VCB=-10V ;f=1MHz 420 pF hFE-1 Classifications R O 55-110 80-160 2 |
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Descripción similar - 2SA1264N |
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