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2SD1162 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1162 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1162 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 5mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 5mA B 2.0 V ICBO Collector Cutoff Current VCB= 400V; IE= 0 10 μA hFE-1 DC Current Gain IC= 2A ; VCE= 2V 400 3000 hFE-2 DC Current Gain IC= 3A ; VCE= 2V 100 Switching Times ton Turn-On Time 1.0 μs ts Storage Time 12 μs tf Fall Time IC= 3A; IB1= -IB2= 30mA; RL= 50Ω,VCC≈150V 6 μs hFE-1 Classifications M L K 400-800 600-1200 1000-3000 isc Website:www.iscsemi.cn 2 |
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