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TSAL5300-FSZ Datasheet(PDF) 1 Page - Vishay Siliconix |
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TSAL5300-FSZ Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page TSAL5300 Document Number 81008 Rev. 1.7, 08-Mar-05 Vishay Semiconductors www.vishay.com 1 96 11505 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL5300 is a high efficiency infrared emitting diode in GaAs technology, molded in clear, bluegrey tinted plastic packages. Features • Extra high radiant power and radiant intensity • Low forward voltage • Suitable for high pulse current operation • Standard T-1¾ ( ∅ 5 mm) package • Angle of half intensity ϕ = ± 22° • Peak wavelength λp = 940 nm • High reliability • Good spectral matching to Si photodetectors • Lead (Pb)-free component • Component in accordance to ELV 2000/53/EC, RoHS 2002/95/EC and WEEE 2002/96/EC Applications Infrared remote control units with high power require- ments Free air transmission systems Infrared source for optical counters and card readers IR source for smoke detectors Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Part Ordering Code Remarks TSAL 5300 TSAL5300 MOQ 4000 pc (Bulk) TSAL 5300 TSAL5300-FSZ MOQ 5000 pc (1000 pc / Ammopack) TSAL 5300 TSAL5300-GSZ MOQ 5000 pc (1000 pc / Ammopack) Parameter Test condition Symbol Value Unit Reverse Voltage VR 5V Forward current IF 100 mA Peak Forward Current tp/T = 0.5, tp = 100 µsIFM 200 mA Surge Forward Current tp = 100 µsIFSM 1.5 A Power Dissipation PV 210 mW Junction Temperature Tj 100 °C Operating Temperature Range Tamb - 55 to + 100 °C Storage Temperature Range Tstg - 55 to + 100 °C Soldering Temperature t ≤ 5 sec, 2 mm from case Tsd 260 °C Thermal Resistance Junction/ Ambient RthJA 350 K/W e2 |
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