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TSHA520 Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza TSHA520
Descripción Electrónicos  GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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TSHA520.
Vishay Telefunken
1 (6)
Rev. 2, 20-May-99
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 81019
GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1
¾)
Package
Description
The TSHA520. series are high efficiency infrared emit-
ting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
70 % radiant power improvement.
Features
D Extra high radiant power and radiant intensity
D Suitable for high pulse current operation
D Standard T–1¾ (ø 5 mm) package
D Angle of half intensity ϕ = ± 12°
D Peak wavelength lp = 875 nm
D High reliability
D Good spectral matching to Si photodetectors
94 8390
Applications
Infrared remote control and free air transmission systems with high power and long transmission distance re-
quirements in combination with PIN photodiodes or phototransistors.
Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
VR
5
V
Forward Current
IF
100
mA
Peak Forward Current
tp/T = 0.5, tp = 100 ms
IFM
200
mA
Surge Forward Current
tp = 100 ms
IFSM
2.5
A
Power Dissipation
PV
210
mW
Junction Temperature
Tj
100
°C
Operating Temperature Range
Tamb
–55...+100
°C
Storage Temperature Range
Tstg
–55...+100
°C
Soldering Temperature
t
x 5sec, 2 mm from case
Tsd
260
°C
Thermal Resistance Junction/Ambient
RthJA
350
K/W


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