STU330S datasheet(2/8 Pages) SAMHOP

No. de pieza	STU330S

Descripción Electrónicos	N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Fabricante Electrónico	SAMHOP [SamHop Microelectronics Corp.]

Página de inicio	http://www.samhop.com.tw

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2 / 8 page

Symbol

Min

Typ

Max

Units

BVDSS

30

V

1

IGSS

±100

nA

VGS(th)

1

V

22

gFS

15

S

CISS

478

pF

COSS

100

pF

CRSS

65

pF

Qg

10.5

nC

10

17

20

tD(ON)

8.1

ns

tr

ns

tD(OFF)

ns

tf

ns

VDS=15V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=15V

ID=1A

VGS=10V

RGEN=6 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=20A

VDS=15V , ID=20A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

IDSS

uA

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=24V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=4.5V , ID=17.5A

28

38

m ohm

f=1.0MHz

STU/D330S

Ver 1.0

www.samhop.com.tw

Sep,03,2008

2

1.9

3

VSD

nC

Qgs

nC

Qgd

1.3

2.2

Gate-Drain Charge

Gate-Source Charge

Diode Forward Voltage

VDS=15V,ID=20A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=1.7A

0.79

1.2

V

IS

Maximum Continuous Drain-Source Diode Forward Current

1.7

A

nC

4

VDS=15V,ID=20A,VGS=10V

VDS=15V,ID=20A,VGS=4.5V

b

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)

_

c

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STU330S Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

STU330S Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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