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2SC4075 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4075 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4075 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=10μA; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10μA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=50mA; IB=5m A 2.0 V ICBO Collector cut-off current VCB=200V; IE=0 0.1 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 μA hFE DC current gain IC=10mA ; VCE=10V 40 200 fT Transition frequency IC=10mA ; VCE=30V 50 MHz COB Output capacitance IE=0; VCB=50V;f=1MHz 5.3 pF hFE Classifications C D E 40-80 60-120 100-200 |
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