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2SC5199 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5199 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC5199 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 160 V VCEsat Collector-emitter saturation voltage IC=8A; IB=0.8A 2.5 V VBE Base-emitter on voltage IC=6A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=160V; IE=0 5 μA IEBO Emitter cut-off current VEB=5V; IC=0 5 μA hFE-1 DC current gain IC=1A ; VCE=5V 55 160 hFE-2 DC current gain IC=6A ; VCE=5V 35 fT Transition frequency IC=1A ; VCE=5V 30 MHz COB Collector output capacitance f=1MHz;VCB=10V 170 pF hFE-1 classifications R O 55-110 80-160 |
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