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2N6058 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2N6058 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6058 2N6059 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6058 80 VCEO(SUS) Collector-emitter sustaining voltage 2N6059 IC=0.1A ;IB=0 100 V VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=24mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=12A ;IB=120mA 3.0 V VBEsat Base-emitter saturation voltage IC=12A ;IB=120mA 4.0 V VBE Base-emitter on voltage IC=6A ; VCE=3V 2.8 V 2N6058 VCE=40V; IB=0 ICEO Collector cut-off current 2N6059 VCE=50V; IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 2.0 mA hFE-1 DC current gain IC=6A ; VCE=3V 750 hFE-2 DC current gain IC=12A ; VCE=3V 100 fT Trainsistion frequency IC=5A ;VCE=3V;f=1MHz 4 MHz |
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