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BD250A Datasheet(PDF) 1 Page - Savantic, Inc. |
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BD250A Datasheet(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C DESCRIPTION ·With TO-3PN package ·Complement to type BD249/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD246 -55 BD246A -70 BD246B -90 VCBO Collector-base voltage BD246C Collector emitter -115 V BD246 -45 BD246A -60 BD246B -80 VCEO Collector-emitter voltage BD246C Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -25 A ICM Collector current-peak -40 A IB Base current -5 A PC Collector power dissipation TC=25 125 W Tj Junction temperature -65~150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1 /W Fig.1 simplified outline (TO-3PN) and symbol |
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Descripción similar - BD250A |
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