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BDV67A Datasheet(PDF) 2 Page - Savantic, Inc. |
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BDV67A Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BDV67/67A/67B/67C/67D CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDV67 60 BDV67A 80 BDV67B 100 BDV67C 120 V(BR)CEO Collector-emitter breakdown voltage BDV67D IC=30mA, IB=0 150 V VCEsat Collector-emitter saturation voltage IC=10A ,IB=40mA 2.0 V VBE Base-emitter on voltage IC=10A ; VCE=3V 2.5 V ICBO Collector cut-off current VCB=VCBOmax, IE=0 VCB=1/2VCBOmax; Tj=150 1.0 4.0 mA ICEO Collector cut-off current VCE=1/2VCEOmax, IB=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA hFE-1 DC current gain IC=1A ; VCE=3V 3000 hFE-2 DC current gain IC=10A ; VCE=3V 1000 hFE-3 DC current gain IC=16A ; VCE=3V 1000 CC Collector capacitance IE=0 ; VCB=10V;f=1MHz 300 pF VF Diode forward voltage IE=10A 3.0 V ton Turn-on time 1.0 µs toff Turn-off time IC = 10 A, IB1 =-IB2=40 mA VCC = 12V 3.5 µs THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-mb Thermal resistance junction to mounting base 0.625 K/W |
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