BC184

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for general purpose amplifier applications.

Pinning

1 = Collector

2 = Base

3 = Emitter

TO-92

.022(0.56)

.014(0.36)

.050

(1.27)

.148(3.76)

.132(3.36)

Typ

.190(4.83)

.170(4.33)

.100

(2.54)

Typ

.050

(1.27)

Typ

.022(0.56)

.014(0.36)

.190(4.83)

.170(4.33)

.500

(12.70)

Min

3 2 1

Dimensions in inches and (millimeters)

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

45

V

Collector-Emitter Voltage

30

V

Emitter-Base Voltage

6

V

Collector Current

100

mA

Total Power Dissipation

350

mW

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Rank

B

C

Range

240~500

450~900

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

45

-

-

V

Collector-Emitter Breakdown Voltage

30

-

-

V

Emitter-Base Breakdown Volatge

6

-

-

V

Collector Cutoff Current

-

-

15

nA

Emitter Cutoff Current

-

-

15

nA

-

0.07

0.25

V

-

0.2

0.6

V

-

-

1.2

V

-

0.5

-

V

0.55

0.62

0.7

V

-

0.83

-

V

240

-

900

-

Transition Frequency

150

-

-

MHz

Output Capacitance

-

-

5

pF

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%