IRF640 datasheet(2/2 Pages) DCCOM

No. de pieza	IRF640

Descripción Electrónicos	TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET

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Fabricante Electrónico	DCCOM [Dc Components]

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2 / 2 page

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain-Source Breakdown Voltage

V(BR)DSS

200

-

V

VGS=0V, ID=250

µA

Drain-Source Leakage Current

IDSS

-

0.2

mA

VDS=200V, VGS=0V

-

1.0

VDS=160V, VGS=0V, TJ=125oC

Gate-Source Forward Leakage Current

IGSSF

-

100

nA

VGSF=20V, VDS=0V

Gate-Source Reverse Leakage Current

IGSSR

-

-100

VGSR=-20V, VDS=0V

Gate Threshold Voltage

VGS(th)

2.0

-

4.0

V

VDS=VGS, ID=250

µA

Static Drain-Source On-Resistance

RDS(on)

-

0.18

Ω

VGS=10V, ID=10A(Note)

Forward Transconductance

gFS

6.0

-

S

VDS 3.2V, ID=10A(Note)

Input Capacitance

Ciss

-

1600

Output Capacitance

Coss

-

750

pF

VDS=25V, VGS=0V, f=1.0MHz

Reverse Transfer Capacitance

Crss

-

300

Turn-On Delay Time

td(on)

-

30

Rise Time

tr

-

60

ns

VDD=30V, ID=10A,

Turn-Off Delay Time

td(off)

-

80

VGS=10V, RG=4.7

Ω(Note)

Fall Time

tf

-

60

Total Gate Charge

Qg

-

36

63

Gate-Source Charge

Qgs

-

16

-

nC

VDS=160V, ID=18A, VGS=10V(Note)

Gate-Drain Charge

Qgd

-

26

-

Internal Drain Inductance

LD

-

4.5

-

nH

Measured from the drain lead 0.25"

from package to center of die

Internal Source Inductance

LS

-

7.5

-

nH

Measured from the source lead 0.25"

from package to source bond pad

Diode Forward Voltage

VSD

-

1.8

2.0

V

IS=18A, VGS=0V(Note)

Reverse Recovery Time

trr

-

450

-

ns

IF=18A, di/dt=100A/

µs(Note)

Forward Turn-On Time

ton

Intrinsic turn-on time is neglegible and dominated by inductance LS+LD

Thermal Resistance

Junction to Case

R

θJC

-

1.0

o

C/W

-

Junction to Ambient

R

θJA

-

62.5

Electrical Characteristics (TJ = 25oC unless otherwise specified)

Note: Pulse Test: Pulse Width

300

µs, Duty Cycle

2%

R

DC COMPONENTS CO., LTD.

IRF640

N-Channel Power MOSFET

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