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SMG3314 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

No. de Pieza. SMG3314
Descripción  P-Channel Enhancement Mode Power Mos.FET
Descarga  4 Pages
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Fabricante  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
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SMG3314 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

   
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Electrical Characteristics( Tj=25 C Unless otherwise specified)
Total Gate Charge
-0.1
-1.0
100
-1
-10
240
460
6.2
1.4
0.3
7.6
8.2
17.5
9
230
130.4
40
±
V/
V
nA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=-15V
f=1.0MHz
VDS=-15V
ID=- 1 A
VGS=-10V
RG=6
RD=15
Ω
Ω
ID=-1.7A
VDS=-15V
VGS=-10V
VGS=-10V, ID=- 1.7A
VGS=-4.5V, ID=-1.3A
VGS= 20V
±
VDS=-30V,VGS=0
VDS=-30V,VGS=0
VDS=VGS, ID=-250uA
Reference to 25 , ID=-1mA
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
S
2
VDS=-10V, ID=-1.7A
_
_
_
C
o
C
o
500
_
_
VGS=-4.0V, ID=-0.4A
RDS(ON)
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
-30
V
VGS=0V, ID=-250uA
_
_
2
Forward Transconductance
Gfs
2
2
o
C
o
C
o
_
VGS=-10V, ID=- 0.8A
270
_
_
Source-Drain Diode
_
_
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
VSD
_
_
IS=-1.25A, VGS=0V.
V
-1.2
Pulsed Source Current (Body Diode)
VD=VG=0V,VS=-1.2V
-1
-6.4
Continuous Source Current (Body Diode)
ISM
IS
_
_
_
_
A
A
2
1
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270
when mounted on min. copper pad.
°C/W
01-Jun-2002 Rev. A
Page 2 of 4
Elektronische Bauelemente
SMG3314
-1.9A, -30V,RDS(ON) 240m
P-Channel Enhancement Mode Power Mos.FET
Ω


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