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CAT5221WI-25 Datasheet(PDF) 4 Page - ON Semiconductor

No. de pieza CAT5221WI-25
Descripción Electrónicos  Dual Digitally Programmable Potentiometer with 64 Taps and I2C Interface
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT5221WI-25 Datasheet(HTML) 4 Page - ON Semiconductor

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CAT5221
Doc. No. MD-2113 Rev. L
4
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
D.C. OPERATING CHARACTERISTICS
Over recommended operating conditions unless otherwise stated.
Symbol Parameter
Test Conditions
Min
Typ
Max
Units
ICC
Power Supply Current
fSCL = 400kHz
1
mA
ISB
Standby Current (VCC = 5.0V)
VIN = GND or VCC; SDA Open
1
µA
ILI
Input Leakage Current
VIN = GND to VCC
10
µA
ILO
Output Leakage Current
VOUT = GND to VCC
10
µA
VIL
Input Low Voltage
-1
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 1.0
V
VOL1
Output Low Voltage (VCC = 3.0V)
IOL = 3 mA
0.4
V
CAPACITANCE
TA = 25°C, f = 1.0MHz, VCC = 5V
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
CI/O
(1)
Input/Output Capacitance (SDA)
VI/O = 0V
8
pF
CIN
(1)
Input Capacitance (A0, A1, A2, A3, SCL)
VIN = 0V
6
pF
A.C. CHARACTERISTICS
Over recommended operating conditions unless otherwise stated.
Symbol
Parameter
Min
Typ
Max
Units
fSCL
Clock Frequency
400
kHz
TI
(1)
Noise Suppression Time Constant at SCL, SDA Inputs
50
ns
tAA
SLC Low to SDA Data Out and ACK Out
0.9
µs
tBUF
(1)
Time the Bus Must Be Free Before a New Transmission Can Start
1.2
µs
tHD:STA
Start Condition Hold Time
0.6
µs
tLOW
Clock Low Period
1.2
µs
tHIGH
Clock High Period
0.6
µs
tSU:STA
Start Condition Setup Time (For a Repeated Start Condition)
0.6
µs
tHD:DAT
Data in Hold Time
0
ns
tSU:DAT
Data in Setup Time
100
ns
tR
(1)
SDA and SCL Rise Time
0.3
µs
tF
(1)
SDA and SCL Fall Time
300
ns
tSU:STO
Stop Condition Setup Time
0.6
µs
tDH
Data Out Hold Time
50
ns
POWER UP TIMING
(1)
Over recommended operating conditions unless otherwise stated.
Symbol
Parameter
Min
Typ
Max
Units
tPUR
Power-up to Read Operation
1
ms
tPUW
Power-up to Write Operation
1
ms
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.


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