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SD103C Datasheet(Hoja de datos) 2 Page - SEMTECH ELECTRONICS LTD.

No. de Pieza. SD103C
Descripción  SILICON SCHOTTKY BARRIER DIODES
Descarga  2 Pages
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Fabricante  SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
Página de inicio  http://www.semtech.net.cn
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 2 page
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Dated : 23/06/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
0
10
20
1
tp
Typical non repetitive forward surge
current versus pulse width
Rectangular pulse
I F
40
30
50
A
SD103
Typical variation of reverse current
at various temperatures
0
-1
10
1
VR
30
50V
A
I R
2
10
10
10
3
SD103
Typical variation of fwd. current
vs.fwd.voltage for primary conduction
through the Schottky barrier
-2
10
0
-1
10
1
VF
0.5
1V
mA
I F
2
10
10
10
3
SD103
0
00.5
1
2
1.5V
1
VF
Typical high current forward
conduction curve
tp=300 s, duty cycle=2%
I F
4
3
5
A
SD103
-3
10
10-2
-1
10
10
2
10
3
10 ms
10
20
40
Tamb=125 C
o
o
100 C
75 C
o
o
50 C
o
25 C
Blocking voltage deration
versus temperature at various
average forward currents
SD103
0
100
200 C
Tamb
VR
Typical capacitance
versus reverse voltage
pF
Ctot
100
40
0
10
20
30
50
V
o
100 mA
200 mA
I F=400 mA
10
0
20
50V
40
30
VR
7
5
4
3
2
10
2
3
5
4
7
1
SD103
SD103A...SD103C




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