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CSS-S20122G Datasheet(PDF) 4 Page - China Semiconductor Corporation |
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CSS-S20122G Datasheet(HTML) 4 Page - China Semiconductor Corporation |
4 / 7 page CHINA SEMICONDUCTOR Spec. No. CORPORATION Rev. Absolute Maximum Rating - (Ta=25 ) Symbol Unit PAD mW IAF mA Peak Current Per Dice(duty cycle 1/10,1KHz) IPF mA - mA/ VR V Topr Tstg Note:Solder temperature 1/16 inch below seating plane for 3 seconds at 260 Electro-optical Characteristics - Symbol Min. Typ. Max. Unit VF - 2.1 2.8 V Iv 1000 2500 - ucd P - 570 - nm - 30 - nm IR - - 100 A IV-m - - 2:1 . Page 3/6 Luminous Intensity Matching Ratio IF=10mA http://www.csctw.com.tw IF=20mA VR=5V PS-DS-S20122/S20123G 5 Rating -40 ~ +105 70 IF=20mA IF=20mA IF=10mA 25 90 Derating Linear From 25 Per Dice Operating Temp. A (Ta=25 ) Condition Storage Temp. Model No CSS-S20122/S20123G Parameter Power Dissipation Per Dice Continuous Forward Current Per Dice Reverse Voltage Per Dice Reverse Current Peak Emission Wavelength Parameter -40 ~ +105 0.33 Forward Voltage Per Segment Luminous Intensity Per Segment Spectrum Radiation Bandwidth |
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