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TLC2201MFK Datasheet(PDF) 1 Page - Texas Instruments |
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TLC2201MFK Datasheet(HTML) 1 Page - Texas Instruments |
1 / 62 page TLC220x, TLC220xA, TLC220xB, TLC220xY Advanced LinCMOS ™ LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS SLOS175 – FEBRUARY 1997 1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 D B Grade Is 100% Tested for Noise 30 nV/ √Hz Max at f = 10 Hz 12 nV/ √Hz Max at f = 1 kHz D Low Input Offset Voltage . . . 500 µV Max D Excellent Offset Voltage Stability With Temperature . . . 0.5 µV/°C Typ D Rail-to-Rail Output Swing D Low Input Bias Current 1 pA Typ at TA = 25°C D Common-Mode Input Voltage Range Includes the Negative Rail D Fully Specified For Both Single-Supply and Split-Supply Operation description The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS ™ process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS ™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices. The combination of excellent dc and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations. The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance. The C-suffix devices are characterized for operation from 0 °C to 70°C. The I-suffix devices are characterized for operation from – 40 °C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of – 55 °C to 125°C. Advanced LinCMOS is a trademark of Texas Instruments Incorporated. Copyright © 1997, Texas Instruments Incorporated On products compliant to MIL-PRF-38535, all parameters are tested unless otherwise noted. On all other products, production processing does not necessarily include testing of all parameters. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. 1 10 100 f – Frequency – Hz TYPICAL EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY 60 1 k 10 k 50 40 30 20 10 0 VDD = 5 V RS = 20 Ω TA = 25°C Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. |
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