BCP68T1

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

1.0

1000

100

10

IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltage

0.8

0.6

0.4

0.2

0

1.0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1.0 V

VCE(sat) @ IC/IB = 10

80

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

0

70

60

50

40

30

1.0

2.0

3.0

4.0

TJ = 25°C

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitance

0

5.0

10

15

20

TJ = 25°C

25

20

15

10

5.0

1000

IC, COLLECTOR CURRENT (mA)

Figure 6. Base-Emitter Temperature Coefficient

– 0.8

–1.2

–1.6

– 2.0

– 2.4

– 2.8

100

10

1.0

1.0

0.8

0.6

0.4

0.2

0

100

IB, BASE CURRENT (mA)

10

1.0

0.1

0.01

TJ = 25°C

I C = 10 mA

= 100 mA

= 500 mA

5.0

R

θVB for VBE

= 50 mA

Figure 7. Saturation Region

= 1000 mA