TPIC6A259 datasheet(4/11 Pages) TI

No. de pieza	TPIC6A259

Descripción Electrónicos	POWER LOGIC 8-BIT ADDRESSABLE LATCH

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TPIC6A259

POWER LOGIC 8-BIT ADDRESSABLE LATCH

SLIS004B – APRIL 1993 – REVISED SEPTEMBER 1995

4

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

schematic of inputs and outputs

EQUIVALENT OF EACH INPUT

TYPICAL OF ALL DRAIN OUTPUTS

VCC

Input

LGND

PGND

DRAIN

25 V

12 V

LGND

RSENSE

absolute maximum ratings over the recommended operating case temperature range (unless

otherwise noted)†

Logic supply voltage, VCC (see Note 1)

7 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Logic input voltage range, VI

– 0.3 V to 7 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power DMOS drain-to-source voltage, VDS (see Note 2)

50 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous source-to-drain diode anode current

1 A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed source-to-drain diode anode current (see Note 3)

2 A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed drain current, each output, all outputs on, ID, TC = 25°C (see Note 3)

1.1 A

. . . . . . . . . . . . . . . . . . . . .

Continuous drain current, each output, all outputs on, ID, TC = 25°C

350 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak drain current single output, TC = 25°C (see Note 3)

1.1 A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single-pulse avalanche energy, EAS (see Figure 6)

75 mJ

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Avalanche current, IAS (see Note 4)

600 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total dissipation

See Dissipation Rating Table

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating virtual junction temperature range, TJ

–40

°C to 150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating case temperature range, TC

–40

°C to 125°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, Tstg

–65

°C to 150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES:

1. All voltage values are with respect to LGND and PGND.

2. Each power DMOS source is internally connected to PGND.

3. Pulse duration

≤ 100 µs, and duty cycle ≤ 2%.

4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 210 mH, and IAS = 600 mA (see Figure 6).

DISSIPATION RATING TABLE

PACKAGE

TC ≤ 25°C

POWER RATING

DERATING FACTOR

ABOVE TC = 25°C

TC = 125°C

POWER RATING

DW

1750 mW

14 mW/

°C

350 mW

NE

2500 mW

20 mW/

°C

500 mW

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