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TPS1101 Datasheet(PDF) 4 Page - Texas Instruments

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No. de Pieza. TPS1101
Descripción  SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
Descarga  10 Pages
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Fabricante  TI [Texas Instruments]
Página de inicio  http://www.ti.com
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TPS1101 Datasheet(HTML) 4 Page - Texas Instruments

 
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TPS1101, TPS1101Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics at TJ = 25°C (unless otherwise noted)
static
PARAMETER
TEST CONDITIONS
TPS1101
TPS1101Y
UNIT
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
VGS(th)
Gate-to-source
threshold voltage
VDS = VGS,
ID = – 250 µA
–1
– 1.25
– 1.5
– 1.25
V
VSD
Source-to-drain voltage
(diode-forward voltage)†
IS = – 1 A,
VGS = 0 V
– 1.04
– 1.04
V
IGSS
Reverse gate current,
drain short circuited to
source
VDS = 0 V,
VGS = – 12 V
±100
nA
IDSS
Zero-gate-voltage drain
VDS =12 V
VGS =0V
TJ = 25°C
– 0.5
µA
IDSS
gg
current
VDS = – 12 V,
VGS = 0 V
TJ = 125°C
–10
µA
VGS = – 10 V
ID = – 2.5 A
90
90
rDS( )
Static drain-to-source
VGS = – 4.5 V ID = – 1.5 A
134
190
134
m
rDS(on)
Static drain to source
on-state resistance†
VGS = – 3 V
ID =0 5 A
198
310
198
m
VGS = – 2.7 V
ID = – 0.5 A
232
400
232
gfs
Forward
transconductance†
VDS = – 10 V,
ID = – 2 A
4.3
4.3
S
† Pulse test: pulse duration
≤ 300 µs, duty cycle ≤ 2%
dynamic
PARAMETER
TEST CONDITIONS
TPS1101, TPS1101Y
UNIT
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Qg
Total gate charge
11.25
Qgs
Gate-to-source charge
VDS = – 10 V, VGS = – 10 V,
ID = – 1 A
1.5
nC
Qgd
Gate-to-drain charge
2.6
td(on)
Turn-on delay time
6.5
ns
td(off)
Turn-off delay time
VDD = – 10 V, RL = 10 Ω,ID = – 1 A,
19
ns
tr
Rise time
DD
,
RG = 6 Ω,
L
,
See Figures 1 and 2
D
,
5.5
tf
Fall time
13
ns
trr(SD)
Source-to-drain reverse recovery time
IF = 5.3 A,
di/dt = 100 A/
µs
16


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