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DMN4015LK3-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN4015LK3-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 8 page DMN4015LK3 Document Revision: 1 2 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4015LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source voltage VDSS 40 V Gate-Source voltage VGS ±20 V Continuous Drain current VGS = 10V (Note 3) ID 20.8 A TA=70°C (Note 3) 16.6 (Note 2) 13.5 Pulsed Drain current VGS= 10V (Note 4) IDM 72.8 A Continuous Source current (Body diode) (Note 3) IS 13.2 A Pulsed Source current (Body diode) (Note 4) ISM 72.8 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power dissipation Linear derating factor (Note 2) PD 4.36 34.8 W mW/ °C (Note 3) 10.3 82.4 (Note 5) 2.19 17.5 Thermal Resistance, Junction to Ambient (Note 2) RθJA 28.6 °C/W (Note 3) 12.1 (Note 5) 57.0 Thermal Resistance, Junction to Lead (Note 6) RθJL 0.85 Operating and storage temperature range TJ, TSTG -55 to 150 °C Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). |
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Descripción similar - DMN4015LK3-13 |
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