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DMP4051LK3 Datasheet(Hoja de datos) 4 Page - Diodes Incorporated

No. de Pieza. DMP4051LK3
Descripción  40V P-CHANNEL ENHANCEMENT MODE MOSFET
Descarga  8 Pages
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Fabricante  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
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DMP4051LK3
Document Revision: 1
4 of 8
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP4051LK3
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-40
V
ID = -250μA, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
-0.5
μA
VDS= -40V, VGS= 0V
Gate-Source Leakage
IGSS
±100
nA
VGS= ±20V, VDS= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-1.0
-3.0
V
ID= -250μA, VDS= VGS
Static Drain-Source On-Resistance (Note 7)
RDS (ON)
0.051
VGS= -10V, ID= -12A
0.085
VGS= -4.5V, ID= -8A
Forward Transconductance (Notes 7 & 8)
gfs
16.6
S
VDS= -15V, ID= -12A
Diode Forward Voltage (Note 7)
VSD
-0.98
-1.2
V
IS= -12A, VGS= 0V
Reverse recovery time (Note 8)
trr
138
ns
IS= -12A, di/dt= 100A/μs
Reverse recovery charge (Note 8)
Qrr
841
nC
DYNAMIC CHARACTERISTICS (
Note 8)
Input Capacitance
Ciss
674
pF
VDS= -20V, VGS= 0V
f= 1MHz
Output Capacitance
Coss
115
pF
Reverse Transfer Capacitance
Crss
67.7
pF
Total Gate Charge
Qg
7.0
nC
VGS= -4.5V
VDS= -20V
ID= -12A
Total Gate Charge
Qg
14
nC
VGS= -10V
Gate-Source Charge
Qgs
2.2
nC
Gate-Drain Charge
Qgd
3.7
nC
Turn-On Delay Time (Note 9)
tD(on)
2.3
ns
VDD= -20V, VGS= -10V
ID= -12A, RG ≅ 6.0Ω
Turn-On Rise Time (Note 9)
tr
14.1
ns
Turn-Off Delay Time (Note 9)
tD(off)
25.1
ns
Turn-Off Fall Time (Note 9)
tf
14.3
ns
Notes:
7. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.




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