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TPS54620 Datasheet(PDF) 3 Page - Texas Instruments

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No. de pieza TPS54620
Descripción Electrónicos  17V Input, 6A Output, Synchronous Step Down Switcher With Integrated FET in 3.5mm x 3.5mm Package(SWIFT??
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Fabricante Electrónico  TI [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI - Texas Instruments

TPS54620 Datasheet(HTML) 3 Page - Texas Instruments

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PACKAGE DISSIPATION RATINGS
(1) (2) (3)
ELECTRICAL CHARACTERISTICS
TPS54620
www.ti.com ........................................................................................................................................................................................................ SLVS949 – MAY 2009
THERMAL IMPEDANCE
ψ
JT THERMAL CHARACTERISTIC
PACKAGE
JUNCTION TO AMBIENT
JUNCTION TO TOP
RGY
32°C/W
5°C/W
(1)
Maximum power dissipation may be limited by overcurrent protection
(2)
Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where
distortion starts to substantially increase. Thermal management of the PCB should strive to keep the junction temperature at or below
150°C for best performance and long-term reliability. See power dissipation estimate in application section of this data sheet for more
information.
(3)
Test board conditions:
a. 2.5 inches × 2.5 inches, 4 layers, thickness: 0.062 inch
b. 2 oz. copper traces located on the top of the PCB
c. 2 oz. copper ground planes on the 2 internal layers and bottom layer
d. 4 thermal vias located under the device package
TJ = –40°C to 150°C, VIN = 4.5V to 17V, PVIN = 1.6V to 17V (unless otherwise noted)
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY VOLTAGE (VIN AND PVIN PINS)
PVIN operating input voltage
1.6
17
V
VIN operating input voltage
4.5
17
V
VIN internal UVLO threshold
VIN rising
4.0
4.5
V
VIN internal UVLO hysterisis
150
mV
VIN shutdown supply Current
EN = 0 V
2
5
µA
VIN operating – non switching supply current
VSENSE = 810 mV
600
800
µA
ENABLE AND UVLO (EN PIN)
Enable threshold
Rising
1.21
1.26
V
Enable threshold
Falling
1.10
1.17
Input current
EN = 1.1 V
1.15
µA
Hysteresis current
EN = 1.3 V
3.4
µA
VOLTAGE REFERENCE
Voltage reference
0 A
≤ Iout ≤ 6 A
0.792
0.800
0.808
V
MOSFET
High-side switch resistance
BOOT-PH = 3 V
32
60
m
High-side switch resistance(1)
BOOT-PH = 6 V
26
40
m
Low-side Switch Resistance(1)
VIN = 12 V
19
30
m
ERROR AMPLIFIER
Error amplifier Transconductance (gm)
–2
µA < ICOMP < 2 µA, V(COMP) = 1 V
1300
µMhos
Error amplifier dc gain
VSENSE = 0.8 V
1000
3100
V/V
Error amplifier source/sink
V(COMP) = 1 V, 100 mV input overdrive
±110
µA
Start switching threshold
0.25
V
COMP to Iswitch gm
16
A/V
CURRENT LIMIT
High-side switch current limit threshold
8
11
A
Low-side switch sourcing current limit
7
10
A
Low-side switch sinking current limit
2.3
A
(1)
Measured at pins
Copyright © 2009, Texas Instruments Incorporated
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