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2SC3181N Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

No. de Pieza. 2SC3181N
Descripción  Silicon NPN Power Transistors
Descarga  4 Pages
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Fabricante  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Página de inicio  http://www.jmnic.com
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2SC3181N Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

   
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JMnic
Product Specification
2
Silicon NPN Power Transistors
2SC3181N
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ,IB=0
120
V
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=0.6A
2.0
V
VBE
Base-emitter voltage
IC=4A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=120V; IE=0
5
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
55
160
hFE-2
DC current gain
IC=4A ; VCE=5V
35
fT
Transition frequency
IC=1A ; VCE=5V
30
MHz
Cob
Output capacitance
IE=0 ; VCB=10V ;f=1MHz
190
pF
hFE-1 Classifications
R
O
55-110
80-160


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