BF392 BF393

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

200

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

50

30

20

TJ = +125°C

25

°C

–55

°C

VCE = 10 Vdc

100

Figure 2. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

0.2

100

50

20

1.0

Ccb

10

2.0

5.0

0.5

1.0

2.0

5.0

10

20

50

100

200

Ceb

Figure 3. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

100

70

50

30

20

10

7.0

5.0

3.0

2.0

100

70

50

30

20

10

TJ = 25°C

VCE = 20 V

f = 20 MHz

1.0

IC, COLLECTOR CURRENT (mA)

Figure 4. “On” Voltages

1.4

0

TJ = 25°C

VBE(on) @ VCE = 10 V

VCE(sat) @ IC/IB = 10

VBE(sat) @ IC/IB = 10

1.2

1.0

0.8

0.6

0.4

0.2

100

70

50

30

20

10

7.0

5.0

3.0

2.0

1.0

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

MPSA43

Figure 5. Maximum Forward Bias

Safe Operating Area

CURRENT LIMIT

THERMAL LIMIT

(PULSE CURVES @ TC = 25°C)

SECOND BREAKDOWN LIMIT

MPSA42

100

µs

1.0 ms

TC = 25°C

TA = 25°C

CURVES APPLY

BELOW RATED VCEO

500

0.5

1.0

2.0

5.0

10

20

50

100

200

100

50

20

10

5.0

2.0

1.0

0.5

200

500

10

µs

100 ms