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STE180N05 Datasheet(Hoja de datos) 3 Page - STMicroelectronics

No. de Pieza. STE180N05
Descripción  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
Descarga  8 Pages
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =40 V
ID = 180 A
RG =4.7
VGS =10 V
(see test circuit, figure 3)
40
315
440
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
ISD
I SDM(
•)
Source-drain Current
Source-drain Current
(pulsed)
180
540
A
A
VSD (
∗)
Forward On Volt age
ISD =180 A
VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 180 A
di/ dt = 100 A/
µs
VDD =25 V
Tj =150
oC
(see test circuit, figure 3)
160
480
6
ns
nC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STE180N05
3/8




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