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FAN3268TMX Datasheet(PDF) 2 Page - Fairchild Semiconductor

No. de pieza FAN3268TMX
Descripción Electrónicos  2A Low-Voltage PMOS-NMOS Bridge Driver
Download  16 Pages
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FAN3268TMX Datasheet(HTML) 2 Page - Fairchild Semiconductor

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© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FAN3268 • Rev. 1.0.0
2
Ordering Information
Part Number
Logic
Input Threshold
Eco Status
Packing Method
FAN3268TMX
Non-Inverting Channel and
Inverting Channel + Dual Enables
TTL
RoHS
2,500 Units on
Tape & Reel
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Package Outline
Figure 2. Pin Configuration (Top View)
Thermal Characteristics
(1)
Package
Θ
JL
(2)
Θ
JT
(3)
Θ
JA
(4)
Ψ
JB
(5)
Ψ
JT
(6)
Units
8-Pin Small Outline Integrated Circuit (SOIC)
40
31
89
43
3
°C/W
Notes:
1.
Estimates derived from thermal simulation; actual values depend on the application.
2.
Theta_JL (
ΘJL): Thermal resistance between the semiconductor junction and the bottom surface of all the leads (including any
thermal pad) that are typically soldered to a PCB.
3.
Theta_JT (
ΘJT): Thermal resistance between the semiconductor junction and the top surface of the package, assuming it is
held at a uniform temperature by a top-side heatsink.
4.
Theta_JA (ΘJA): Thermal resistance between junction and ambient, dependent on the PCB design, heat sinking, and airflow.
The value given is for natural convection with no heatsink, as specified in JEDEC standards JESD51-2, JESD51-5, and
JESD51-7, as appropriate.
5.
Psi_JB (
ΨJB): Thermal characterization parameter providing correlation between semiconductor junction temperature and an
application circuit board reference point for the thermal environment defined in Note 4. For the SOIC-8 package, the board
reference is defined as the PCB copper adjacent to pin 6.
6.
Psi_JT (
ΨJT): Thermal characterization parameter providing correlation between the semiconductor junction temperature and
the center of the top of the package for the thermal environment defined in Note 4.


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