December 2008

©2008 Fairchild Semiconductor Corporation

FDS8882 Rev.C

www.fairchildsemi.com

1

FDS8882

30 V, 9 A, 20.0 m

Ω

Features

and fast switching

High power and current handling capability

Termination is Lead-free and RoHS Compliant

General Description

The FDS8882 has been designed to minimize losses in power

conversion application. Advancements in both silicon and

package technologies have been combined to offer the lowest

Applications

Notebook System Regulators

DC/DC Converters

SO-8

D

D

D

D

S

S

S

G

Pin 1

G

S

S

S

D

D

D

D

5

6

7

8

3

2

1

4

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

30

V

Gate to Source Voltage

±20

V

Drain Current -Continuous

9

A

-Pulsed

21

Single Pulse Avalanche Energy

(Note 3)

32

mJ

Power Dissipation

(Note 1a)

2.5

W

Power Dissipation

(Note 1b)

1.0

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

(Note 1)

25

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

50

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDS8882

FDS8882

SO8

13 “

12 mm

2500 units