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TPC8030 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPC8030 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPC8030 2009-09-29 4 1.6 2 100 100 0.8 1 0 4 8 12 16 20 3.3 VGS =3.0 V 10 3.2 4 3.4 0 0.4 0.8 1.2 3.5 8 5 6 3.1 3.6 3.7 VGS = 10 V 4.5 1 100 10 0.1 1 10 Ta = −55°C 25 100 0.1 1 10 0.1 1 10 100 5.5 ID = 11 A 2.8 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 Ta = −55°C 100 25 1 3 4 6 0 10 20 30 40 50 0 2 5 3.4 VGS = 3.0 V 8 3.1 0 0.2 0.4 0.6 3.2 0 2 6 4 8 10 3.3 6 10 5 4 3.6 3.7 3.5 ID – VDS ID – VDS ID – VGS VDS – VGS |Yfs| – ID RDS (ON) – ID Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test Drain −source voltage VDS (V) Drain-source voltage VDS (V) Gate −source voltage VGS (V) Gate −source voltage VGS (V) Drain current ID (A) Drain current ID (A) |
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