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TPCF8402 Datasheet(PDF) 1 Page - Toshiba Semiconductor

No. de pieza TPCF8402
Descripción Electrónicos  Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCF8402 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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TPCF8402
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
TPCF8402
Portable Equipment Applications
Motor Drive Applications
DC-DC Converter Applications
• Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.)
N Channel RDS (ON) = 38 mΩ (typ.)
• High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.)
N Channel |Yfs| = 6.8 S (typ.)
• Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V)
N Channel IDSS = 10 μA (VDS = 30 V)
• Enhancement-mode
: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA)
N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-30
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
-30
30
V
Gate-source voltage
VGSS
±20
±20
V
DC
(Note 1)
ID
-3.2
4.0
Drain current
Pulse
(Note 1)
IDP
-12.8
16.0
A
Single-device operation
(Note 3a)
PD (1)
1.35
1.35
Drain power
dissipation
(t
= 5 s)
(Note 2a)
Single-device value at
dual operation(Note 3b)
PD (2)
1.12
1.12
Single-device operation
(Note 3a)
PD (1)
0.53
0.53
Drain power
dissipation
(t
= 5 s)
(Note 2b)
Single-device value at
dual operation(Note 3b)
PD (2)
0.33
0.33
W
Single pulse avalanche energy (Note 4)
EAS
0.67
2.6
mJ
Avalanche current
IAR
-1.6
2.0
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.11
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3U1B
Weight: 0.011 g (typ.)
Circuit Configuration
1
2
3
4
8
7
6
5


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