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2N7002K Datasheet(PDF) 1 Page - Weitron Technology |
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2N7002K Datasheet(HTML) 1 Page - Weitron Technology |
1 / 6 page WEITRON http:www.weitron.com.tw Maximum Ratings(TA=25℃ Unless Otherwise Specified) Rating Symbol Value Unit VDS 60 V VGS 3,V GS @10V(TA 640 ,V GS @10V(TA I D 500 Pulsed Drain Current1,2 I DM 950 mA ˚C ˚C Tota l Po wer Dis sipation(TA=25˚C ) PD 1.38 W Maximum Junction-ambient 3 R θJA 90 TJ Tstg Device Marking 2N7002K N-Channel Enhancement Mode Power MOSFET SOT-23 1 2 3 1/6 1 2 3 GATE SOURCE DRAIN DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE Lead(Pb)-Free P b Description: The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extr nt and cost-e ectiveness device. The 2N7002K is universally used for all commercial- industrial applications. *Simple Drive Requirement *Small Package Outline Features: ±20 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 2N7002K = RK ˚C/W -55~+150 Rev.A 07-Aug-08 Storage Temperature Range Operating Junction Temperature Range +150 * * Gate Pretection Diode Gate−Source ESD Rating (HBM, Method 3015) ESD 2500 V |
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