BC856B datasheet(1/6 Pages) WEITRON

No. de pieza	BC856B

Descripción Electrónicos	PNP Dual General Purpose Transistors

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PNP Dual General Purpose Transistors

Maximum Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Symbol

VCEO

VCBO

VEBO

IC

BC856

65

80

Unit

V

mA

100

BC857

45

50

5.0

100

BC858

30

5.0

100

Rating

BC856BDW=3B , BC857BDW=3F , BC857CDW=3G , BC858BDW=3K , BC858CDW=3L

Device Marking

WEITRON

BC856BDW Series

http://www.weitron.com.tw

Total Device Dissipation Per Device

FR-5 Board(1)TA = 25°C

Derate Above 25°C

Thermal Resistance, Junction to Ambient

Junction Temperature Range

Storage Temperature Range

Characteristics

Tj

Tstg

PD

Symbol

Max

380

250

3.0

328

+150

-55 to +150

Unit

mW

mW/ °C

°C/W

°C

Thermal Characteristics

RθJA

Note : FR-5=1.0 x 0.75 x 0.062 inch

SOT-363(SC-88)

1

2

3

6 5

4

5.0

14-Nov-07

1/6

3

4

5

1

2

6

PNP+PNP

Lead(Pb)-Free

P b

Número de pieza similar - BC856B

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
NXP Semiconductors	BC856B	47Kb / 8P	PNP general purpose transistors 1999 Apr 12
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FutureWafer Tech Co.,Lt...	BC856B	1Mb / 12P	PNP Silicon Epitaxial General Purpose Transistors
Taiwan Semiconductor Co...	BC856B	88Kb / 3P	0.2 Watts PNP Plastic-Encapsulate Transistors
SeCoS Halbleitertechnol...	BC856B	263Kb / 3P	BC856A

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Descripción similar - BC856B

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
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BC856B Datasheet(PDF) 1 Page - Weitron Technology

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