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MC-4516CD641ES-A10 Datasheet(PDF) 5 Page - Elpida Memory |
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MC-4516CD641ES-A10 Datasheet(HTML) 5 Page - Elpida Memory |
5 / 16 page Data Sheet E0066N10 5 MC-4516CD641ES,4516CD641PS,4516CD641XS Electrical Specifications • All voltages are referenced to VSS (GND). • After power up, wait more than 100 µs and then, execute power on sequence and CBR (Auto) refresh before proper device operation is achieved. Absolute Maximum Ratings Parameter Symbol Condition Rating Unit Voltage on power supply pin relative to GND VCC –0.5 to +4.6 V Voltage on input pin relative to GND VT –0.5 to +4.6 V Short circuit output current IO 50 mA Power dissipation PD 8 W Operating ambient temperature TA 0 to +70 °C Storage temperature Tstg –55 to +125 °C Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Condition MIN. TYP. MAX. Unit Supply voltage VCC 3.0 3.3 3.6 V High level input voltage VIH 2.0 VCC + 0.3 V Low level input voltage VIL –0.3 + 0.8 V Operating ambient temperature TA 0 70 °C Capacitance (TA = 25 °°°°C, f = 1 MHz) Parameter Symbol Test condition MIN. TYP. MAX. Unit Input capacitance CI1 A0 - A11, BA0(A13), BA1(A12), /RAS, /CAS, /WE 30 60 pF CI2 CLK0, CLK1 23 37 CI3 CKE0, CKE1 18 30 CI4 /CS0, /CS1 18 30 CI5 DQMB0 - DQMB7 7 14 Data input/output capacitance CI/O DQ0 - DQ63 9 18 pF |
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