ADN2531ACPZ-WP datasheet(4/20 Pages) AD

No. de pieza	ADN2531ACPZ-WP

Descripción Electrónicos	11.3 Gbps, Active Back-Termination, Differential Laser Diode Driver

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Fabricante Electrónico	AD [Analog Devices]

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ADN2531

Rev. 0 | Page 4 of 20

Parameter

Min

Typ

Max

Unit

Test Conditions/Comments

POWER SUPPLY

VCC

3.0

3.3

3.6

V

ICC8

36

mA

VBSET = VMSET = 0 V

ISUPPLY9

55

62

mA

VBSET = VMSET = 0 V

1 The voltage between the pin with the specified compliance voltage and GND.

2 Specified for TA = −40°C to +85°C due to test equipment limitation. See the

section for data on performance for TA = −40°C to +100°C.

Typical Performance Characteristics

3 The pattern used is composed of a repetitive sequence of eight 1s followed by eight 0s at 10.7 Gbps.

4 Measured using the high speed characterization circuit shown in Figure 22.

5 The pattern used is K28.5 (00111110101100000101) at 10.7 Gbps rate.

6 The pattern used is K28.5 (00111110101100000101) at 11.3 Gbps rate.

7 Measured at balanced IMODP and IMODN.

8 Only includes current in the ADN2531 VCC pins.

9 Includes current in ADN2531 VCC pins and dc current in IMODP and IMODN pull-up inductors. See the

section for total supply current calculation.

Power Consumption

PACKAGE THERMAL SPECIFICATIONS

Table 2.

Parameter

Min

Typ

Max

Unit

Test Conditions/Comments

θJ-TOP

65

72.2

79.4

°C/W

Thermal resistance from junction to top of package.

θJ-PAD

2.6

5.8

10.7

°C/W

Thermal resistance from junction to bottom of exposed pad.

IC Junction Temperature

125

°C

90%

10%

ALS

IBIAS

AND IMOD

ALS

ASSERT TIME

ALS

NEGATE TIME

t

Figure 2. ALS Timing Diagram

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