TPS62651YFFR datasheet(3/37 Pages) TI

No. de pieza	TPS62651YFFR

Descripción Electrónicos	800-mA 6-MHz HIGH-EFFICIENCY STEP-DOWN CONVERTER WITH I2CTM COMPATIBLE INTERFACE IN CHIP SCALE PACKAGING

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ELECTRICAL CHARACTERISTICS

TPS62650

TPS62651

www.ti.com................................................................................................................................................................................................. SLVS808 – AUGUST 2009

Minimum and maximum values are at VI = 2.3V to 5.5V, VO = 1.2 V, EN = 1.8V, EN_DCDC bit = 1, AUTO mode and

TA = -40°C to 85°C; Circuit of Parameter Measurement Information section (unless otherwise noted). Typical values are at

VI = 3.6V, VO = 1.2 V, EN = 1.8V, EN_DCDC bit = 1, AUTO mode and TA = 25°C (unless otherwise noted).

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY CURRENT

VI

Input voltage range

2.3

5.5

V

VI = 3.6 V, IO = 0 mA, -40°C ≤ TJ≤ 85°C. Device not switching

38

58

µA

IQ

Operating quiescent current

VI = 3.6 V, IO = 0 mA. PWM mode

5.35

mA

VI = 3.6 V, EN = GND, EN_DCDC bit = X, -40°C ≤ TJ≤ 85°C

0.5

3.5

µA

I(SD)

Shutdown current

VI = 3.6 V, EN = VI, EN_DCDC bit = 0, -40°C ≤ TJ≤ 85°C

0.5

3.5

µA

UVLO

Undervoltage lockout threshold

2.05

2.15

V

ENABLE, VSEL, SDA, SCL

VIH

High-level input voltage

0.9

V

VIL

Low-level input voltage

0.4

V

Ilkg

Input leakage current

Input tied to GND or VI, -40°C ≤ TJ≤ 85°C

0.01

0.7

µA

POWER SWITCH

VI = V(GS) = 3.6 V

255

rDS(on)

P-channel MOSFET on resistance

m

Ω

VI = V(GS) = 2.5 V

335

Ilkg

P-channel leakage current, PMOS

V(DS) = 5.5 V, -40°C ≤ TJ≤ 85°C

1

µA

VI = V(GS) = 3.6 V

140

rDS(on)

N-channel MOSFET on resistance

m

Ω

VI = V(GS) = 2.5 V

200

Ilkg

N-channel leakage current, NMOS

V(DS) = 5.5 V, -40°C ≤ TJ≤ 85°C

1

µA

Discharge resistor for power-down

rDIS

15

50

Ω

sequence

P-MOS current limit

2.3 V

≤ VI ≤ 4.8 V. Open loop

1350

1500

1700

mA

Input current limit under short-circuit

VO = 0 V

11

mA

conditions

Thermal shutdown

140

°C

Thermal shutdown hysteresis

15

°C

OSCILLATOR

fSW

Oscillator frequency

IO = 0 mA. PWM mode

5.4

6

6.6

MHz

OUTPUT

2.3 V

≤ VI ≤ 5.5 V, 0 mA ≤ IO(DC) ≤ 800 mA

VO = 0.75 V, 1.05 V, 1.20 V, 1.4375 V (TPS62650)

–2%

2%

VO = 0.75 V, 0.95 V, 1.10 V, 1.4375 V (TPS62651)

PWM operation

Regulated DC output

voltage accuracy

2.3 V

≤ VI ≤ 5.5 V, 0 mA ≤ IO(DC) ≤ 800 mA

VO = 0.75 V, 1.05 V, 1.20 V, 1.4375 V (TPS62650)

–2%

3%

VO = 0.75 V, 0.95 V, 1.10 V, 1.4375 V (TPS62651)

VO

TPS62650/1

PFM/PWM Operation

Regulated DC output

VI = 3.6 V, VO = 1.20 V, IO(DC) = 50 mA

-0.5%

+0.5%

voltage temperature drift

-40°C

≤ TJ ≤ 105°C. PWM operation

Line regulation

VI = VO + 0.5 V (min 2.3 V) to 5.5 V, IO(DC) = 200 mA

0.13

%/V

Load regulation

IO(DC) = 0 mA to 800 mA

–0.00046

%/mA

Feedback input resistance

480

k

Ω

VO = 1.05 V, VSEL = GND, IO(DC) = 1 mA

16

mVPP

PFM operation

ΔVO

Power-save mode ripple voltage

VO = 1.20 V, VSEL = VI, IO(DC) = 1 mA

16

mVPP

PFM operation

DAC

TPS62650

Resolution

6

Bits

TPS62651

Differential nonlinearity

Specified monotonic by design

±0.4

LSB

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