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EN29GL128H Datasheet(PDF) 48 Page - Eon Silicon Solution Inc. |
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EN29GL128H Datasheet(HTML) 48 Page - Eon Silicon Solution Inc. |
48 / 54 page This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.eonssi.com or modifications due to changes in technical specifications. 48 EN29GL128H/L Rev. H, Issue Date: 2009/10/01 TABLE 22. ERASE AND PROGRAMMING PERFORMANCE Limits Parameter Typ Max Unit Comments Sector Erase Time 0.1 2 sec Chip Erase Time 30 120 sec Excludes 00h programming prior to erasure Byte Programming Time 8 200 µs Word Programming Time 8 200 µs Byte 134.4 403.2 Chip Programming Time Word 67.2 201.6 sec Total Write Buffer time 160 ACC Total Write Buffer time 60 µs Excludes system level overhead Erase/Program Endurance 100K cycles Minimum 100K cycles Notes: 1. Typical program and erase times assume the following conditions: room temperature, 3V and checkboard pattern programmed. 2. Maximum program and erase times assume the following conditions: worst case Vcc, 90°C and 100,000 cycles. Table 23. 56-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF Note: Test conditions are Temperature = 25°C and f = 1.0 MHz. Table 24. DATA RETENTION Parameter Description Test Conditions Min Unit 150°C 10 Years Data Retention Time 125°C 20 Years |
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